Measurement of the A1Pi-X1Sigma(+) electronic transition moment of SiO using a shock tube

Details Measurement of the A1Pi-X1Sigma(+) electronic transition moment of SiO using a shock tube Measurement of the A1Pi-X1Sigma(+) electronic transition moment of SiO using a shock tube

Apr 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993jqsrt..49..349p&link_type=abstract

Journal of Quantitative Spectroscopy and Radiative Transfer (ISSN 0022-4073), vol. 49, no. 4, p. 349-360.

Computer Science

6

Electron Transitions, Molecular Excitation, Shock Heating, Shock Tubes, Silicon Oxides, Absorption Spectra, Gas Mixtures, Laser Induced Fluorescence

Scientific paper

The reflected-shock-heated gas in a shock tube was used to measure the electronic transition moment, R(e) sup 2, for the A1Pi-X1Sigma(+) band system of SiO. The absorption spectra of several different gas mixtures were recorded using an optical multichannel analyzer in the 220-310 nm wavelength range. Synthetic spectra were compared with experimental spectra to determine the R(e) sup 2 as a function of internuclear distance, r. Best agreement was achieved if the theoretical values of Langhoff and Arnold are multiplied by a constant value of 1.3, or if they are shifted by 0.25 Bohr toward larger r. However, both our results and the theoretical values are in disagreement with two recent laser-induced fluorescence determinations. We find a transition moment that decreases with increasing r, having a value R(e) sup 2 = 1.3 +/- 0.17 atomic units at the equilibrium internuclear distance of 3.0 Bohr.

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