Measurement of charge carrier decay rates in bulk indium arsenide and mercury cadmium telluride wafers

Details Measurement of charge carrier decay rates in bulk indium arsenide and mercury cadmium telluride wafers Measurement of charge carrier decay rates in bulk indium arsenide and mercury cadmium telluride wafers

Jun 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4288..362g&link_type=abstract

Proc. SPIE Vol. 4288, p. 362-370, Photodetectors: Materials and Devices VI, Gail J. Brown; Manijeh Razeghi; Eds.

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Accurate knowledge of the decay rates of optically generated charge carriers in bulk semiconductor materials is important for various infrared applications. Most of the published decay rates of free carriers generated with above band-gap energy light, in materials such as InAs and InSb are obtained from measurements in thin films. Stronger attenuation of above band gap energy light in these materials prevents the probing in samples thicker than a few microns. To study the decay of free carriers in the bulk semiconductor wafers, we use two-photon absorption of below band gap energy light (obtained from a pulsed CO2 laser). This method generated charge carriers throughout the bulk of the material used (typically having thickness of 1 - 2 mm). The decay of the charge carriers is then probed with a low power cw infrared laser (also with photon energy below the band gap). The decay rates measured at different temperatures are compared with calculations that include Auger and defect-assisted Shockley-Reed-Hall (SRH) recombination processes. Calculation of various recombination processes indicate that the lifetimes are limited by SRH mechanism in InAs samples.

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