MCT heterostructure design and growth by MBE for IR devices

Details MCT heterostructure design and growth by MBE for IR devices MCT heterostructure design and growth by MBE for IR devices

Feb 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4355..228s&link_type=abstract

Proc. SPIE Vol. 4355, p. 228-237, Fifth International Conference on Material Science and Material Properties for Infrared Optoel

Computer Science

4

Scientific paper

The molecular beam epitaxy (MBE) set-up with analytical control equipment of growth process was designed and fabricated for growing A2B6 compounds including the mercury-containing ones. A technology was elaborated for growing mercury-cadmium-telluride (MCT) solid solution heteroepitaxial structures (HS) by molecular beam epitaxy (MBE) method with a given variation of MCT composition throughout the thickness. HS's MCT MBE on CdZnTe/GaAs substrate with different variation composition in layers at MCT film interfaces were designing and growing. These structures were used for manufacture of high quality single, linear and array photoconductors (PC) and photodiodes (PD) operating at 77 K and 200 - 250 K temperature in the wavelength range of 3 - 5 micrometer and 8 - 12 micrometer, up and over 20 micrometer. Widegap layers at MCT film interfaces are used as passivating coating. Narrowgap layer at MCT film/CdZnTe buffer layers interface is used for decrease of PD series resistance. For decrease of dark currents of photodiodes array operating at 200 K HS MCT MBE were used with special composition distribution of composition throughout the thickness.

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