Materials/Device Characterization Challenges for the Semiconductor Industry: Electrical Techniques

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Measurement techniques are more critical for semiconductor materials and devices with reduced device dimensions, larger chip areas, larger wafer diameters, enhanced yield and reduced revenue per chip. Cost-effective processing requires minimal wafer wastage due to measurements. For example, mercury probes are commonly used to characterize the doping profile of epitaxial layers. However, mercury contamination demands that test wafers be discarded. A recent contactless technique, yielding identical results, has eliminated this wastage problem. Junction depths are usually determined destructively, but the recent carrier illumination technique allows such measurements to be contactless. Another example is the characterization of various gate oxide and substrate properties, with the ``contactless" corona charge technique. Surface voltage and surface photovoltage have become important semiconductor characterization tools, largely because of their contactless nature and the availability of commercial equipment. The use of these contactless measurement techniques has broadened from initial application of minority carrier diffusion length measurements to a wide variety of semiconductor characterization, including surface voltage, surface barrier height, flatband voltage, oxide thickness, oxide charge density, interface trap density, mobile charge density, oxide integrity, generation lifetime, recombination lifetime, and doping density.

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