Materials and process issues in the fabrication of high-performance HgCdTe infrared detectors

Details Materials and process issues in the fabrication of high-performance HgCdTe infrared detectors Materials and process issues in the fabrication of high-performance HgCdTe infrared detectors

Apr 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629...81v&link_type=abstract

Proc. SPIE Vol. 3629, p. 81-87, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.

Computer Science

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Scientific paper

Mechanisms of incorporation of native defect and dopants in HgCdTe alloys are reviewed. Origin of the native defect related deep centers in limiting the minority carrier lifetime is explored. Primary and secondary mechanisms operative in the activation of n type and p type dopants in HgCdTe are discussed along with implications for fabrication of high performance detectors.

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