Low-temperature strength tests and SEM imaging of hydroxide catalysis bonds in silicon

Details Low-temperature strength tests and SEM imaging of hydroxide catalysis bonds in silicon Low-temperature strength tests and SEM imaging of hydroxide catalysis bonds in silicon

Apr 2011

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011cqgra..28h5014b&link_type=abstract

Classical and Quantum Gravity, Volume 28, Issue 8, pp. 085014 (2011).

Computer Science

Scientific paper

Silicon is under consideration as a substrate material for the test masses and suspension elements of gravitational wave detectors of improved sensitivity. Hydroxide catalysis bonding is a candidate technique for jointing silicon elements with the potential for both high strength and low mechanical loss. A future detector with quasi-monolithic silicon final stages may operate at cryogenic temperatures. Here we present the first studies of the strength of silicon-silicon bonds at 77 K (liquid nitrogen temperature) and show characteristic strengths of ~44 MPa. When comparing cryogenic to room temperature results, no significant difference is apparent in the strength. We also show that a minimum thickness of oxide layer of 50 nm is desirable to achieve reliably strong bonds. Bonds averaging 47 nm in thickness are achieved for oxide thicknesses greater than 50 nm.

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