Low-temperature operation of silicon drift detectors

Details Low-temperature operation of silicon drift detectors Low-temperature operation of silicon drift detectors

Oct 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1549..265s&link_type=abstract

Proc. SPIE Vol. 1549, p. 265-273, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy II, Oswald H. Siegmund; Richard E. Rot

Astronomy and Astrophysics

Astronomy

Scientific paper

Two types of drift device, namely photodiodes and position sensitive drift chambers with segmented anode and cathode structures, have been studied at room temperature and below. Leakage current and electron mobility have been investigated at low temperature for the drift photodiodes. Self-triggering has been achieved for the position sensitive drift chambers using 60 keV photons, and differences in arrival time between the prompt trigger signal from the cathode and the delayed anode signal have been studied as a function of drift distance and temperature. The response of the photodiodes when coupled to a CsI scintillator at room temperature has been assessed.

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