Low-noise custom VLSI for CdZnTe pixel detectors

Details Low-noise custom VLSI for CdZnTe pixel detectors Low-noise custom VLSI for CdZnTe pixel detectors

Nov 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3445..347c&link_type=abstract

Proc. SPIE Vol. 3445, p. 347-354, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IX, Oswald H. Siegmund; Mark A. Gummin

Astronomy and Astrophysics

Astronomy

6

Scientific paper

A custom analog VLSI chip is being developed for the readout of pixelated CdZnTe detectors in the focal plane of an astronomical hard x-ray telescope. The chip is intended for indium bump bonding to a pixel detector having pitch near 0.5 mm. A complete precision analog signal processing chain, including charge sensitive preamplifier, shaping amplifiers and peak detect and hold circuit, is provided for each pixel. Here we describe the circuitry and discus the performance of a functional prototype fabricated in a 1.2 micrometers CMOS process at Orbit Semiconductor. Dynamic performance is found to be close to SPICE model predictions over a self-triggering range extending from 1 to 50 keV. Integral non-linearity and noise while acceptable ar not as god as predicted. Power consumption is only 250 uW per pixel. Layout and design techniques are discussed which permit successful self-triggering operation at the low 1 keV threshold.

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