Computer Science – Performance
Scientific paper
Sep 1990
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990spie.1308..377s&link_type=abstract
IN: Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990 (A91-36726 15-35). Bel
Computer Science
Performance
Electrical Faults, Indium Antimonides, Junction Diodes, P-N Junctions, Photochemical Reactions, Semiconductor Diodes, Electron Tunneling, Leakage, Negative Resistance Devices, Silicon Dioxide, Volt-Ampere Characteristics
Scientific paper
The effect of photochemical deposition of SiO2 on the current-voltage characteristics of the InSb p+n diodes was studied. By applying different voltages on the gate electrode over the p+n junction periphery, various kinds of current-voltage characteristics can be induced, including multiple negative differential resistance in forward bias. This strongly indicates that the major part of the current, especially the reverse leakage current, flows through the surface of the p+n junction. Reverse leakage current as low as 20 microA/sq cm at -1.1 V for a p+n diode with n-type doping concentration of 2 x 10 to the 15th/cu cm could be easily achieved by applying a gate voltage of -9 V. It is also found that diodes with similar performance can be fabricated by properly adjusting the photochemical vapor deposition passivation process.
Lee Si-Chen
Liu Kou-Chen
Sun Tai-Ping
Yang Sheng-Jenn
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