Computer Science – Performance
Scientific paper
Oct 1995
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995sprt.nasa...27s&link_type=abstract
In its Proceedings of the 14th Space Photovoltaic Research and Technology Conference (SPRAT 14) p 27(SEE N96-15042 03-20)
Computer Science
Performance
Heat Transfer Coefficients, Low Temperature, Performance Tests, Quantum Efficiency, Semiconductor Junctions, Semiconductors (Materials), Solar Cells, Temperature Measurement, Thermal Energy, Gallium Arsenides, Germanium, Indium Gallium Arsenides, Indium Phosphides, Performance Prediction, Phosphates, Temperature Distribution
Scientific paper
Past NASA missions to Mars, Jupiter, and the outer planets were powered by radioisotope thermal generators (RTG's). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaic (PV) and thermophotovoltaic (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV and TPV data base for planetary mission planners and cell designers, we have compiled low temperature low intensity (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate dI(sub SC)/dT, dV(sub OC)/dT, dFF/dT, and also as a function of intensity, an accurate prediction of cell performance under the AMO spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GainP/GaAs/Ge, InP, InGaAs/InP, InP/InGaAs/InP, and GainP. Temperatures range as low as -175 C and intensities range from 1 sun to .02 suns.
Appelbaum Joseph
Brinker David J.
Jenkins Philip P.
Schelman David A.
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