LETI/LIR's amorphous silicon uncooled microbolometer development

Details LETI/LIR's amorphous silicon uncooled microbolometer development LETI/LIR's amorphous silicon uncooled microbolometer development

Jul 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3379..139t&link_type=abstract

Proc. SPIE Vol. 3379, p. 139-144, Infrared Detectors and Focal Plane Arrays V, Eustace L. Dereniak; Robert E. Sampson; Eds.

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Today, a large number of uncooled infrared detector developments are under progress due to the availability of silicon technology that enables realization of low cost 2D IR arrays. LETI/LIR, which has been involved in this field for a few years, has chosen resistive amorphous silicon as thermometer for its uncooled microbolometer development. After a first phase dedicated to acquisition of the most important detector parameters in order to help the modeling and technological development, an IRCMOS laboratory model (256 X 64 with a pitch of 50 micrometer) was realized and characterized. It was shown that NETD of 90 mK at f/1, 25 Hz and 300 K background can be obtained with high thermal insulation (1.2 10(superscript 7) K/W).

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