Statistics – Applications
Scientific paper
Apr 1988
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1988mlci.rept.....r&link_type=abstract
Final Report, Aug. 1986 - Oct. 1987 Mercury LPE Co., Inc., Pittsburgh, PA.
Statistics
Applications
Feasibility Analysis, Growth, Liquid Phase Epitaxy, Mercury (Metal), Semiconductors (Materials), Tellurium, Zinc, Cadmium, High Resolution, Image Processing, Inspection, Room Temperature, Substrates, Utah
Scientific paper
The technical feasibility of growing HgZnTe on CdZnTe for longwave infrared applications has been demonstrated in this Phase 1 program. Mercury Company has developed a technique for growing reproducible large area uniform HgZnTe. The proposed research was to focus on longwave infrared (LWIR) HzZnTe, and Mercury Company routinely achieves cutoff wavelengths of 7.0 to 10.6 microns at room temperature. High quality large area Cd(0.8)Zn (0.2)Te substrates were developed by Galtech Semiconductor Materials Corporation, Utah. High resolution surface and internal IR inspection of substrates was achieved using image analysis; techniques were developed that could lead to automated inspection. In addition, SEM capabilities were developed that could lead to automated inspection of epitaxy material.
No associations
LandOfFree
Lattice-matched HgZnTe epitaxy development does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Lattice-matched HgZnTe epitaxy development, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lattice-matched HgZnTe epitaxy development will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-849804