Lateral epitaxial overgrowth for defect-free GaN substrates

Details Lateral epitaxial overgrowth for defect-free GaN substrates Lateral epitaxial overgrowth for defect-free GaN substrates

Apr 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629...42f&link_type=abstract

Proc. SPIE Vol. 3629, p. 42-51, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.

Computer Science

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Epitaxial growth techniques have made possible the fabrication of heteroepitaxial GaN films, which are of great interest for fabricating optical, high power and high frequency devices. A major problem for many device applications, however, is that these materials contain high densities of dislocations, between 10(superscript 8) and 10(superscript 10) cm(superscript -2), which limit device performance. Recently, it has been found that reduced dislocation densities can be achieved using a lateral epitaxial overgrowth technique. Our optical and microstructural studios of un-coalesced and coalesced GaN layers indicate that most of the structural defects are confined only to the patterning apertures and that high quality material is present in the lateral epitaxial overgrown regions. PL measurements indicated that Si impurities have been incorporated in the epitaxial layers. Cathodoluminescence imaging shows the spatial distribution of recombination centers across the homoepitaxial layers.

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