Laser Spectroscopy of Si3C

Details Laser Spectroscopy of Si3C Laser Spectroscopy of Si3C

May 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005aas...206.3112s&link_type=abstract

American Astronomical Society Meeting 206, #31.12; Bulletin of the American Astronomical Society, Vol. 37, p.478

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Scientific paper

The tildeC1B1 <- tildeX }1A1 band system of the potential interstellar species Si3C has been recorded in a silane/acetylene discharge by resonant two-color two-photon ionization spectroscopy. The origin band is located near 24925 cm-1 (3.09 eV). Several other features in the spectrum are assigned to progressions in the Si-Si stretching modes as well as to sequence and hot band transitions. The assignment was facilitated and is fully supported by ab initio calculations, which also indicate that this is the strongest electronic transition of Si3C in the visible region of the spectrum.

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