Large-format 1280 X 1024 full-frame CCD image sensor with a lateral-overflow drain and transparent gate electrode

Details Large-format 1280 X 1024 full-frame CCD image sensor with a lateral-overflow drain and transparent gate electrode Large-format 1280 X 1024 full-frame CCD image sensor with a lateral-overflow drain and transparent gate electrode

Jul 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1447..274s&link_type=abstract

Proc. SPIE Vol. 1447, p. 274-282, Charge-Coupled Devices and Solid State Optical Sensors II, Morley M. Blouke; Ed.

Computer Science

Performance

1

Scientific paper

This paper describes the design and performance of a large format, 1280(H) X 1024(V) pixel, full-frame CCD image sensor. A lateral-overflow drain (LOD) is incorporated for antiblooming control while providing high responsivity and photographic speed. The use of an LOD also provides high optical overload protection, and an extremely linear photoresponse compared to that of its vertical-overflow drain (VOD) counterpart owing to the near-unity nonideality factor of the LOD structure. Optical overloads in excess of 43,000 times saturation have been measured without blooming, and the photoresponse nonlinearity at saturation is less than 1%. The LOD structure is also much easier to fabricate than a typical VOD structure and is much less sensitive to processing and drain bias variations. The device's two-phase CCD pixels measure 16 micrometers on a side. The LOD structure occupies roughly 30% of this area using conservative design rules. Since much of this area is required for overlap of the various layers of the color-filter array (CFA), the incorporation of the LOD does not result in any significant additional loss of fill factor. To further enhance the detector's sensitivity, a transparent gate electrode process has been implemented which replaces one of the CCD's polysilicon electrodes with indium-tin oxide (ITO). The ITO gate electrode increases the quantum efficiency of the detector from 1.5% to 15.8% at a wavelength of 400 nm. The responsivity of the transparent gate electrode structure over the visible spectrum is 210 nA/lux. This is more than 38% higher than that of the all-polysilicon gate structure.

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