Kinetics and Mechanisms of Volatilization of SiC and SiO2 in the Solar Nebula

Details Kinetics and Mechanisms of Volatilization of SiC and SiO2 in the Solar Nebula Kinetics and Mechanisms of Volatilization of SiC and SiO2 in the Solar Nebula

Mar 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996lpi....27..865m&link_type=abstract

Lunar and Planetary Science, volume 27, page 865

Computer Science

2

Interstellar Silicon Carbide, Silica Lifetimes, Volatilization: Kinetics, Volatilization: Oxidative, Volatilization: Silicon Dioxide

Scientific paper

We determined the evaporation rate of SiC and SiO2 in H2-CO2 and noble gas-H2-CO2 gas mixtures. The evaporation rate of SiO2 in H2-CO2 with log fO2 = IW - 2.8 is close to that for SiC, but the rate increases significantly as log fO2 is decreased from IW - 3 to IW - 6. In contrast, rates for SiC are independent of fO2 of the gas. Dilution by He has a negligible effect on the evaporation rate of SiC and SiO2, but reaction rates in Ne- and Ar-bearing gas mixtures are slower. These effects are interpreted in terms of the dependence of diffusion rates of gaseous species on the composition of the gas mixtures used in the experiments. Retardation of the overall evaporation rate of SiC due to diffusion of gaseous reactants to the surface of SiC or of product gaseous species from it has only a small effect on the very short lifetimes of interstellar SiC grains exposed to the solar nebula. _

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