Johnson noise limited operation of photovoltaic InSb detectors

Details Johnson noise limited operation of photovoltaic InSb detectors Johnson noise limited operation of photovoltaic InSb detectors

Feb 1975

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975apopt..14..450h&link_type=abstract

Applied Optics, vol. 14, Feb. 1975, p. 450-453.

Computer Science

Performance

32

Amplifier Design, Background Noise, Indium Antimonides, Photovoltaic Effect, Preamplifiers, Signal Detectors, Energy Conversion Efficiency, Equivalent Circuits, Optimization, Performance Prediction, Performance Tests, Photodiodes, Temperature Effects, Volt-Ampere Characteristics

Scientific paper

Photovoltaic indium antimonide detectors have been operated at temperatures less than 77 K with sufficiently low background radiation levels that Johnson noise limited performance is realized. Under such conditions the noise equivalent power (NEP) is completely determined by the detector operating temperature, resistance, and quantum efficiency. Optimization of these parameters in the manufacture of commercially available detectors has led to 5-micron NEP's as low as 1 fentowatt. The particular preamplifier is critical to the achievement of Johnson noise limited operation and is described in detail.

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