Isotopic fractionation of KR and Xe implanted in solids at very low energies

Details Isotopic fractionation of KR and Xe implanted in solids at very low energies Isotopic fractionation of KR and Xe implanted in solids at very low energies

Jun 1987

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1987gecoa..51.1599b&link_type=abstract

Geochimica et Cosmochimica Acta (ISSN 0016-7037), vol. 51, June 1987, p. 1599-1611.

Computer Science

11

Ion Implantation, Krypton Isotopes, Tungsten, Xenon Isotopes

Scientific paper

Results on the implantation of Kr and Xe in W under closed system conditions at very low energies (50-500 eV) are reported. Investigation of the fraction of gas trapped as a function of time reveals the existence of competing trapping and release mechanisms, and analysis of recovered trapped gas and residual gas phases shows that both elemental and isotropic fractionation result from these mechanisms. It is determined that the mass dependence for the overall implantation process is at or near m exp 1, with heavier isotopes enriched in the implanted gas. This mass dependence is inferred to result from implantation and a combination of diffusive and gas sputtering release mechanisms. These results reaffirm the conclusion of Bernatowicz and Fahey (1986) that previously observed isotopic fractionation of Kr and Xe in carbonaceous material synthesized in electrical discharges owes its origin to low-energy ion implantation, and also suggest that this process may be relevant to incorporation of noble gases in early solar system materials. The implication of these results for noble gas mass spectrometry are discussed.

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