Mathematics – Logic
Scientific paper
Sep 1995
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554...15b&link_type=abstract
Proc. SPIE Vol. 2554, p. 15-24, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan W
Mathematics
Logic
Scientific paper
High quality 2 inch Hg(subscript 1-x)Cd(subscript x)Te/Sapphire structures are grown by an isothermal vapor phase epitaxy process starting from MOCVD CdTe/Sapphire hybrid substrates. HgTe growth and CdTe/HgTe solid state interdiffusion processes produce the transformation of the starting CdTe layer into a compositionally controlled Hg(subscript 1-x)Cd(subscript x)Te film on the inert base sapphire substrate grown. By using experimental growth conditions involving HgTe/CdTe interdiffusion rates higher than HgTe growth rates, in depth compositionally uniform Hg(subscript 1-x)Cd(subscript x)Te films can be obtained in a really simple one-step process. A 2-zone open tube vertical reactor improved for 2 inch wafers has been used for the present process, making it very attractive for manufacturing purposes. Morphological, optical, electrical, and structural characteristics of the iso-VPE mercury cadmium telluride on sapphire structures are reported witnessing their technological power as infrared materials.
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