IR detector system based on high-Tc superconducting bolometer on SI membrane

Details IR detector system based on high-Tc superconducting bolometer on SI membrane IR detector system based on high-Tc superconducting bolometer on SI membrane

Jun 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2746..290b&link_type=abstract

Proc. SPIE Vol. 2746, p. 290-296, Infrared Detectors and Focal Plane Arrays IV, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

Scientific paper

An infrared detector system based on high-T(subscript c) superconducting (HTS) membrane bolometer is reported. Superconducting transition-edge bolometer has been manufactured by silicon micromachining using an epitaxial GdBa(subscript 2)Cu(subscript 3)O(subscript 7-x) film on an epitaxial yttria- stabilized zirconia buffer layer on silicon. The active area of the element is 0.85 X 0.85 mm(superscript 2). The membrane thickness is 1 micrometers , those of the buffer layer and HTS films are 50 nm. The detectivity of bolometer, D(superscript *), is 3.8 X 10(superscript 9) cm Hz(superscript 1/2) W(superscript -1) at 84.5 K and within the frequency regime 100 < f < 300 Hz. The optical response is 580 V/W at time constant 0.4 ms. This is one of the fastest composite type HTS-bolometer ever reported. The bolometer is mounted on a metal N(subscript 2)-liquid cryostat, which fits the preamplifier. With the volume of N(subscript 2)-reservoir being 0.1 liter, the cryostat holds nitrogen for about 8 hours. Using only wire heater with constant current, the temperature stability of about 0.03 K/h is achieved. The detector system can be used in IR- Fourier spectroscopy at wavelengths longer than the typical operating range of semiconductor detectors (wavelength greater than about 20 micrometers ).

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