Ion sheath structure and Material Degradation due to Ion Bombardment around High Voltage Solar Arrays -Ground Simulation

Details Ion sheath structure and Material Degradation due to Ion Bombardment around High Voltage Solar Arrays -Ground Simulation Ion sheath structure and Material Degradation due to Ion Bombardment around High Voltage Solar Arrays -Ground Simulation

Nov 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998sct..conf...61t&link_type=abstract

Proceedings of the 6th Spacecraft Charging Conference. November 2-6, 1998. AFRL Science Center, Hanscom AFB, MA, USA., p.61-65

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Scientific paper

At Osaka University, a ground facility was developed for simulation of material and space plasma interaction. In order to understand the interaction between plasma flow and a solar array applied a negatively biased voltage, i.e. the ion sheath structure, a sample plate, which of the one side is an electrode collecting ions and of the other side is a dielectric side, was exposed to oxygen plasma flows generated using the facility. The collected ion current and the spatial plasma potential were measured for variations in the biased voltage and the attack angle of the plate to the plasma flow. The ion current and the plasma potential distribution were found to be intensively changed by the biased voltage and the attack angle, particularly a scaling parameter derived from the one-dimensional ion sheath theory. Furthermore, Kapton films, located on the center of the negatively biased plate, were exposed to oxygen plasma flows. The x-ray photoelectron spectroscopic analysis showed that an addition reaction and a desorption of structural components occurred on the films by ion bombardment.

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