Investigation of Anomalous Sputtering Behavior of a Ga-In Target

Astronomy and Astrophysics – Astronomy

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Scientific paper

Nonstoichiometric sputtering has been studied for decades, in part because of its potential role in modifying the composition of materials in the inner Solar System. Sputtering of multi-component materials typically results in lighter atoms/isotopes sputtering at average angles closer to the target normal than heavier atoms/isotopes in the absence of chemical influences, but Ga-In may not adhere to this. There is a hint of experimental evidence that the isotopes of Ga sputtered from this target exhibit the opposite behavior. We present computer simulation results that also suggest this anomalous behavior, and discuss a new experiment we are conducting to probe this behavior in more detail. In the experiment, material sputtered by Ar+ is collected on carbon foil, which is analyzed after collection to determine the angular distribution of sputtered material. Analysis of the collector foils utilizes two techniques, SIMS (Secondary Ion Mass Spectrometry) and RBS (Rutherford Backscattering Spectrometry).

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