Intrinsic 1/f noise in doped silicon thermistors for cryogenic calorimeters

Details Intrinsic 1/f noise in doped silicon thermistors for cryogenic calorimeters Intrinsic 1/f noise in doped silicon thermistors for cryogenic calorimeters

Nov 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3445..640h&link_type=abstract

Proc. SPIE Vol. 3445, p. 640-644, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IX, Oswald H. Siegmund; Mark A. Gummin

Astronomy and Astrophysics

Astronomy

7

Scientific paper

We have characterized the intrinsic 1/f noise of ion- implanted silicon thermistors in the 0.05-0.5 K temperature range. This noise can have a significant effect on detector performance and needs to be taken into account in the design optimization of IR bolometers and x-ray microcalorimeters. The noise can be reasonably well fit as (Delta) R/R fluctuations whose spectral density varies as 1/f and increases steeply with lower doping density and lower temperatures. The observed 1/f noise can be approximated as a resistance fluctuations.

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