Internal stress around micropipes in 6H-SiC substrates

Details Internal stress around micropipes in 6H-SiC substrates Internal stress around micropipes in 6H-SiC substrates

Apr 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..393o&link_type=abstract

Proc. SPIE Vol. 3629, p. 393-399, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.

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6H-SiC single crystals are expected to be suitable substrates for thin film growth of the wide bandgap semiconductor (GaN, because it has a small lattice mismatch with GaN. Moreover, SiC single crystals are also expected for high-power and high- temperature electric applications because of its wide band gap, high breakdown voltage, high thermal conductivity and high temperature stability. Single crystals with large size used for electronic devices can be grown on seed crystals only by the modified Lely method based on sublimation deposition. But, single crystals have serious defects so called micropipes. These micropipes penetrate almost along the [001] direction. The internal strain around micropipes was investigated using the polarizing optical microscope for the purpose of clarifying the formation mechanisms and decreasing the amount of micropipes. A special interference figure was found around a micropipe under the crossed polars on the polarizing microscope. In this work, the special interference figure around micropipes due to internal stress was explained, and the magnitude and distribution of the stress was measured by means of photoelasticity and the mapping of Raman spectra.

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