Interface properties of HgCdTe passivated with the combination of CdS and ZnS

Details Interface properties of HgCdTe passivated with the combination of CdS and ZnS Interface properties of HgCdTe passivated with the combination of CdS and ZnS

Sep 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2894..111z&link_type=abstract

Proc. SPIE Vol. 2894, p. 111-114, Detectors, Focal Plane Arrays, and Applications, William G. Frederick; Junhong Su; Marc Wigdor

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The process for forming CdS and ZnS films on n and p type of HgCdTe with x - 0.218 in aqueous sulfide solutions is described. The XPS analysis was carried out and photodiodes passivated with deferent thickness of sulfide were fabricated to assess the validity of the procedure. The results indicate that the native sulfide layers formed in this way show almost the same properties as those grown in nonaqueous solutions.

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