InP Schottky-gate field-effect transistors

Details InP Schottky-gate field-effect transistors InP Schottky-gate field-effect transistors

Nov 1975

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975ited...22.1023b&link_type=abstract

IEEE Transactions on Electron Devices, vol. ED-22, Nov. 1975, p. 1023-1030.

Computer Science

26

Field Effect Transistors, Indium Phosphides, Negative Feedback, Power Gain, Schottky Diodes, Volt-Ampere Characteristics, Additives, Capacitance, Chromium, Electron Density (Concentration), Equivalent Circuits, Frequency Response, Gallium Arsenides, Metal Surfaces

Scientific paper

MESFET's with gates 1 micron long were fabricated in LPE layers of InP on Cr-doped InP substrates. The devices have current gain cutoff frequencies of 20 GHz or somewhat larger. This value is greater than that of the best analogous GaAs MESFET by a factor of 1.5. The highest power gain cutoff frequency for the InP device is 33 GHz, which is somewhat smaller than that of the best analogous GaAs device. The lowest minimum noise figure at 10 GHz for these first InP devices is 3.9 dB with an associated gain of 4.8 dB. The best result for the GaAs counterpart is 3.2 dB with an associated gain of 7.8 dB. The power gain of the InP device suffers compared to the GaAs device because of degenerative feedback resulting from a large gate-to-drain capacitance and because of a small output resistance.

Affiliated with

Also associated with

No associations

Rating

InP Schottky-gate field-effect transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with InP Schottky-gate field-effect transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and InP Schottky-gate field-effect transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1377015