Computer Science – Performance
Scientific paper
Jun 1996
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2746..277o&link_type=abstract
Proc. SPIE Vol. 2746, p. 277-285, Infrared Detectors and Focal Plane Arrays IV, Eustace L. Dereniak; Robert E. Sampson; Eds.
Computer Science
Performance
1
Scientific paper
We used the heterostructures of HgCdTe/CdZnTe/GaAs grown by molecular beam epitaxy for fabrication of photoconductor devices. The composition of MCT films throughout the thickness was controlled in situ by ellipsometry during the growth process. There were wide band gap layers at the interface and at the surface of the MCT films for decreasing the surface recombination which strongly influences on devices characteristics. The use of n-type material for LWIR photoconductors (77 K, the cutoff wavelength is more than 13 mkm) with good performance was demonstrated. The detectivity in maximum of wavelength dependence varies in interval (1.5 divided by 5)(DOT)10(superscript 10) cmHz(superscript 1/2) W(superscript -1). P-type material was used for MWIR photoconductors that operated at room and near room temperatures with the close to the theoretical value detectivity.
Dvoretsky Sergey A.
Liberman V. G.
Mikhailov Nicolai
Ovsyuk Victor N.
Sidorov Yu. G.
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