Infrared detector arrays with multiplexing cryogenic read-out electronics for Isophot

Details Infrared detector arrays with multiplexing cryogenic read-out electronics for Isophot Infrared detector arrays with multiplexing cryogenic read-out electronics for Isophot

May 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989infph..29..235e&link_type=abstract

(Eidgenoessische Technische Hochschule Zuerich, International Conference on Infrared Physics, 4th, Zurich, Switzerland, Aug. 22-

Mathematics

Logic

2

Cryogenic Temperature, Infrared Detectors, Isophotes, Arrays, Cmos, Infrared Astronomy, Photoconductivity, Technological Forecasting

Scientific paper

Cryogenic read-out electronic circuits are developed in a CMOS technology for the multiplexing operation (at temperatures of 4 K and below) of extrinsic photoconducting detectors and detector arrays of Ge and Si in the Infrared Space Observatory instrument Isophot, covering the wavelength region 10-200 microns. Measurements on the 66-element spectroscopic array Isophot-S2 show an NEP around 4 x 10 to the -17th W/sq rt Hz and a voltage responsivity of 100 TV/Ws in low-background operation.

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