InAsP/InP Multi Quantum Well Solar Cells: An improved design for high radiation orbit operation

Details InAsP/InP Multi Quantum Well Solar Cells: An improved design for high radiation orbit operation InAsP/InP Multi Quantum Well Solar Cells: An improved design for high radiation orbit operation

Jan 1997

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1997aipc..387..881f&link_type=abstract

Space technology and applications international forum (STAIF - 97). AIP Conference Proceedings, Volume 387, pp. 881-886 (1997).

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Photoelectric Conversion: Solar Cells And Arrays, Iii-V Semiconductors

Scientific paper

We present the investigation on InP p-i-n based Multi Quantum Well Solar Cells (MQWSC) grown by Chemical Bean Epitaxy (CBE). In order to stress the validity of this MQWSC technology, lattice matched In0.47Ga0.53As/InP MQWSC, strained InxAs1-xP/InP (x=0.3 to 0.70) MQWSC and standard InP p-i-n solar cells have been grown and compared. It is shown that a MQWSC present a much higher short circuit current compared to the standard p-i-n solar cell. However, a drop of the open circuit voltage is also observed. Structural studies of In0.47Ga0.53As/InP have shown an interface restraint of this system, leading to a much lower conversion efficiency. On the other hand, a strained InxAs1-xP/InP (x=0.3 to 0.70) MQWSC present an unexpected higher response to low energy incident photons. This latest remarkable result combined with solar cell radiation damage studies make InxAs1-xP/InP MQWSC a very promising technology for Space solar energy power generation.

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