In-Plane Bistable Nanowire For Memory Devices

Details In-Plane Bistable Nanowire For Memory Devices In-Plane Bistable Nanowire For Memory Devices

2008-05-07

arxiv.org/abs/0805.0889v1

Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2008, Nice : France (2008)

Computer Science

Other Computer Science

Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838)

Scientific paper

We present a nanomechanical device design to be used in a non-volatile mechanical memory point. The structure is composed of a suspended slender nanowire (width : 100nm, thickness 430nm length : 8 to 30$\mu$m) clamped at its both ends. Electrodes are placed on each sides of the nanowire and are used to actuate the structure (writing, erasing) and to measure the position through a capactive bridge (reading). The structure is patterned by electron beam lithography on a pre-stressed thermally grown silicon dioxide layer. When later released, the stressed material relaxes and the beam buckles in a position of lower energy. Such symmetric beams, called Euler beams, show two stable deformed positions thus form a bistable structure. This paper will present the fabrication, simulation and mechanical and electrical actuation of an in plane bistable nanowire. Final paper will include a section on FEM simulations.

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