Improving the high-energy sensitivity of x-ray CCDs

Details Improving the high-energy sensitivity of x-ray CCDs Improving the high-energy sensitivity of x-ray CCDs

Oct 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3765..609k&link_type=abstract

Proc. SPIE Vol. 3765, p. 609-617, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X, Oswald H. Siegmund; Kathryn A. Flan

Astronomy and Astrophysics

Astronomy

Scientific paper

We present a method of improving the quantum efficiency of MOS CCDs. We
show that a change of operation can increase the depletion depth of
standard bulk devices. The conclusions point to a point to a potential
increase in the depletion depth of 300 percent by the use of optimized
materials and operating conditions.

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