Improving radiation tolerance in e2v CCD sensors

Details Improving radiation tolerance in e2v CCD sensors Improving radiation tolerance in e2v CCD sensors

Aug 2009

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009spie.7439e...1b&link_type=abstract

Astronomical and Space Optical Systems. Edited by Warren, Penny G.; Marshall, Cheryl J.; Tyson, Robert K.; Lloyd-Hart, Michael;

Astronomy and Astrophysics

Astronomy

1

Scientific paper

e2v have been developing new approaches to mitigate against the effects of radiation damage in CCD sensors. The first of these is our "rad-hard" device technology, primarily developed to reduce the flat-band voltage shift following ionising radiation. With this a very significant improvement has been demonstrated, the flat-band shift reducing from typically 100-200 mV/kRad(Si) with standard devices to only 6 mV/kRad(Si), plus an associated reduction in the increase in surface dark signal. The rad-hard process thereby allows devices to be operated in environments with up to at least 500kRad total dose and/or with reduced shielding. Developments aimed at reducing the impact of proton radiation have included the manufacture of p-channel devices. Our initial data indicates that at -50°C the increase in charge transfer inefficiency is reduced by a factor of two times for parallel transfer and five times for serial transfer.

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