Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures

Details Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures

Jun 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5353...89c&link_type=abstract

Semiconductor Photodetectors. Edited by Linden, Kurt J.; Dereniak, Eustace L. Proceedings of the SPIE, Volume 5353, pp. 89-9

Computer Science

Scientific paper

Photodetectors (PDs) are an important active device in optoelectronic integrated circuits (OEICs), and, for shorter haul interconnections where circuit (e.g. transimpedance amplifier (TIA)) noise may be the dominant noise in receivers, metal-semiconductor-metal photodiodes (MSM PDs) are attractive due to their low capacitance per unit area compared to PIN photodetectors and the ease of monolithic integration with field effect transistors (FETs). Inverted-MSM PDs (I-MSM PDs), which are thin film MSM PDs with the fingers on the bottom of the device, have demonstrated higher responsivities compared to conventional MSM PDs while maintaining small capacitance per unit area, low dark current (~nA), and high speed. However, the modeling of MSM PDs and I-MSM PDs for insertion into circuit simulators for integrated PD/TIA modeling has not been reported. In this paper, an accurate high-frequency equivalent circuit-level model of thin film I-MSM PDs is obtained using an on-wafer measurement-based modeling technique. This circuit-level model of MSM PDs can be used for capacitance sensitive preamplifier design for co-optimization with widely used simulators (ADS and HSPICE). The obtained circuit-level model shows good agreement with measured s-parameters.

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