Improved HgCdTe technology for high-performance infrared detectors

Details Improved HgCdTe technology for high-performance infrared detectors Improved HgCdTe technology for high-performance infrared detectors

Aug 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4721..242z&link_type=abstract

Proc. SPIE Vol. 4721, p. 242-251, Infrared Detectors and Focal Plane Arrays VII, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

Performance

Scientific paper

To meet the demands for high performance HgCdTe detectors at high yield and producibility, key processes have been optimized and new approaches have been developed. By a superior CdZnTe Bridgman growth process, dislocation densities <1x105cm-2 in substrate and epitaxial layer are achieved for all substrates, ensuring high performance Focal-Plane-Arrays, particularly for (lambda) CO=11,5 micrometers arrays. A new guard ring approach for planar diodes, created by a n+-region in pixel spacing area reduces pixel crosstalk and improves Modulation Transfer Function. For high thermal cycles of the FPA, the flip-chip- technique has been optimized, leading to >2000 cycles for 640x512-FPA's. Producibility and reliability of AIM's MCT FPA technology are demonstrated.

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