Hybridization of a sigma-delta-based CMOS hybrid detector

Details Hybridization of a sigma-delta-based CMOS hybrid detector Hybridization of a sigma-delta-based CMOS hybrid detector

Jul 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010spie.7742e..10k&link_type=abstract

High Energy, Optical, and Infrared Detectors for Astronomy IV. Edited by Holland, Andrew D.; Dorn, David A. Proceedings of th

Astronomy and Astrophysics

Astronomy

Scientific paper

The Rochester Imaging Detector Laboratory, University of Rochester, Infotonics Technology Center, and Jet Process Corporation developed a hybrid silicon detector with an on-chip sigma-delta (ΣΔ) ADC. This paper describes the process and reports the results of developing a fabrication process to robustly produce high-quality bump bonds to hybridize a back-illuminated detector with its ΣΔ ADC. The design utilizes aluminum pads on both the readout circuit and the photodiode array with interconnecting indium bumps between them. The development of the bump bonding process is discussed, including specific material choices, interim process structures, and final functionality. Results include measurements of bond integrity, cross-wafer uniformity of indium bumps, and effects of process parameters on the final product. Future plans for improving the bump bonding process are summarized.

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