Computer Science
Scientific paper
Oct 2005
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5964..275l&link_type=abstract
Advances in Optical Thin Films II. Edited by Amra, Claude; Kaiser, Norbert; Macleod, H. Angus. Proceedings of the SPIE, Volume
Computer Science
Scientific paper
PbTe based semiconductors are well-known narrow gap IV-VI compounds, which are of interest due to potential application in the fabrication of photo-detectors in the mid- and far infrared spectral range. Among them, Pbl-xGexTe is known to have wider band gap than PbTe, which has been used to fabricate photo-detectors with shorter wavelength (λ<6.7 μm). However, the homogeneity of composition in evaporated Pbl-xGexTe thin films directly from bulk alloys has not been investigated. In the paper, we report the investigation that the homogeneity of composition on the surface was studied using energy-dispersive X-ray analysis (EDAX), and the compositional depth profiles was investigated using Auger electron spectroscopy (AES) in combination with argon ion sputtering. ASE depth profiling and characterization of details in the Ge concentration gradient is demonstrated.
Li Baowen
Liu Da Qing
Zhang Feng-Shou
Zhang Shi-Yan
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