Highly sensitive silicon photodetectors with internal discrete amplification

Details Highly sensitive silicon photodetectors with internal discrete amplification Highly sensitive silicon photodetectors with internal discrete amplification

Jun 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5353...29k&link_type=abstract

Semiconductor Photodetectors. Edited by Linden, Kurt J.; Dereniak, Eustace L. Proceedings of the SPIE, Volume 5353, pp. 29-3

Computer Science

Performance

2

Scientific paper

A new class of highly sensitive silicon photodetectors is based on the internal discrete amplification mechanism developed by Amplification Technologies, Inc. The key parameters of the novel photodetectors are high speed and ultra low excess noise at high levels of gain. The photodetectors work both * in the photon counting mode and * for analog proportional detection of few-photon light pulses. Performance parameters of these solid-state devices are comparable to those of vacuum PMTs, and even exceed them for some applications. The main parameters of the photodetectors in photon counting mode are the following: * short rise-fall time of one-electron pulse - less than 400 ps * high count speed - up to 500 MHz (in time gating mode) * timing resolution - 200 ps * fine one-electron pulse height distribution due to low (less than 1.05) excess noise factor

Affiliated with

Also associated with

No associations

Rating

Highly sensitive silicon photodetectors with internal discrete amplification does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Highly sensitive silicon photodetectors with internal discrete amplification, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly sensitive silicon photodetectors with internal discrete amplification will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1395268