Highly efficient THz modulation using optically excited silicon

Details Highly efficient THz modulation using optically excited silicon Highly efficient THz modulation using optically excited silicon

May 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5790..263k&link_type=abstract

Terahertz for Military and Security Applications III. Edited by Hwu, R. Jennifer; Woolard, Dwight L.; Rosker, Mark J. Procee

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Optically controlled modulation of broadband THz radiation with a comparably uniform spatial distribution is demonstrated in a Si-based semiconductor structure with moderate doping. Using THz Time-Domain Spectroscopy a maximum intensity modulation of more than 99% was demonstrated for a spectrum ranging from 50GHz to 3.5THz with 3dB attenuation already for optical excitation as low as only 5mW. The uniformity of the modulation was measured and compared to the THz beam profile.

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