High temperature performance mapping and failure analysis of 4H-silicon carbide mosfets

Details High temperature performance mapping and failure analysis of 4H-silicon carbide mosfets High temperature performance mapping and failure analysis of 4H-silicon carbide mosfets

Jan 1997

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1997aipc..387..843r&link_type=abstract

Space technology and applications international forum (STAIF - 97). AIP Conference Proceedings, Volume 387, pp. 843-850 (1997).

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Field Effect Devices, Semiconductor-Device Characterization, Design, And Modeling

Scientific paper

Silicon carbide (SiC) devices are being considered to play a major role in the development of integrated power systems and aircraft electric systems as required by the Department of Defense's (DOD) More Electric Initiative (MEI) and the More Electric Engines (MEE) programs. The thermal effects on the static and dynamic characteristics of 4H-SiC UMOS devices fabricated by Cree, Inc., were investigated in the operating temperature range of 298 K to 473 K. Though a few devices were available for high temperature characterization, most of them failed either before testing or during the test at low amplitudes of current and voltage. The devices with a positive drain voltage of about 80 volts, were characterized in a high vacuum chamber to determine the effect of temperature on the on-resistance, threshold voltage and leakage current. They had a threshold voltage of 20 volts but the sub-threshold drain current was less than 500 μA. Dynamic thermal characterization was done to determine the effect of temperature on the switching time, switching losses, and reverse recovery. The rise, fall and turn-off delay times were 75 ns, 50 ns and 30 ns, respectively, with very low sensitivity to variation in temperature. The average power dissipation was 34 mW for the entire temperature range. Device failures were observed by way of characteristic degradation such as the lowering of knee voltages, increased on-resistance and lower reverse breakdown potentials. Failures could generally be attributed to a combination of metallization melt and dielectric breakdown related to electrostatic discharges.

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