Computer Science – Performance
Scientific paper
Nov 2001
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4454..180v&link_type=abstract
Proc. SPIE Vol. 4454, p. 180-187, Materials for Infrared Detectors, Randolph E. Longshore; Ed.
Computer Science
Performance
3
Scientific paper
The advantages of mercury cadmium telluride for 'HOT' IR detector applications are discussed. Molecular beam epitaxy (MBE) is used to grow advanced device structures for this purpose. MBE offers the potential to grow HgCdTe heterostructure layers on large silicon substrates leading to very large format and high performance IR focal plane array sin the future. Preliminary material and device properties achieved p+-v-n+ device structures grown on 3 inch oriented silicon wafers are discussed.
Ashokan Renganathan
Boieriu Paul
Grein Christoph H.
Rafol Don
Sivananthan Sivalingam
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