High-speed traveling-wave electro-absorption modulators

Details High-speed traveling-wave electro-absorption modulators High-speed traveling-wave electro-absorption modulators

Dec 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4490....1c&link_type=abstract

Proc. SPIE Vol. 4490, p. 1-10, Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications, Andrew R. Piric

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Electroabsorption modulators (EAMs) based on the quantum confined Stark effect in multiple quantum wells (MQWs) have advantages for high-speed, low drive voltage, and high extinction ratio applications. In this paper, a traveling- wave electrode structure is proposed to achieve high bandwidths with long devices and lower drive voltages at 1.55 micrometers wavelength. An InGaAsP/InGaAsP MQW traveling-wave electroabsorption modulator (TWEAM) with a bandwidth above 20 GHz is fabricated. A drive voltage of 1.2 V for an extinction ratio of 20-dB is demonstrated. The effects of microwave transmission on the high-speed performance of TWEAMs are discussed. Successful data transmission experiments at 30 Gbit/s show a promising system performance of these devices. By using an integrated tandem TWEAM, pulse data transmission above 100 Gbit/s is achieved.

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