High-speed high-efficiency resonant-cavity-enhanced photodiodes

Details High-speed high-efficiency resonant-cavity-enhanced photodiodes High-speed high-efficiency resonant-cavity-enhanced photodiodes

Apr 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..298o&link_type=abstract

Proc. SPIE Vol. 3629, p. 298-306, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.

Computer Science

Scientific paper

In this paper, we review our research efforts on RCE high- speed high-efficiency p-i-n and Schottky photodiodes. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs based RCE photodiodes. For RCE Schottky photodiodes, we have achieved a peak quantum efficiency of 50% along with a 3-dB bandwidth of 100 GHz. The tunability of the detectors via a recess etch is also demonstrated. For p-i-n type photodiodes, we have fabricated and tested widely tunable devices with near 100% quantum efficiencies, along with a 3-dB bandwidth of 50 GHz. Both of these results correspond to the fastest RCE photodetectors published in scientific literature.

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