High-performance quantum cascade lasers grown by metal-organic vapor phase epitaxy

Details High-performance quantum cascade lasers grown by metal-organic vapor phase epitaxy High-performance quantum cascade lasers grown by metal-organic vapor phase epitaxy

Oct 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5564..156w&link_type=abstract

Infrared Systems and Photoelectronic Technology. Edited by Dereniak, Eustace L.; Sampson, Robert E.; Johnson, C. Bruce. Proceed

Computer Science

Scientific paper

We report MOVPE-grown quantum cascade lasers with operating wavelengths between λ~7.5-9.5μm with threshold current densities as low as 2.4kA/cm2 at room temperature. Seven wafers grown for operation at ~9μm show a variation of just 3% in the superlattice periods obtained from X-ray analysis, and laser emission is observed from all wafers with a ~5meV spread of emission energies. Multimode Fabry-Perot and singlemode distributed feedback lasers have been fabricated, operating at λ~7.8μm at room temperature, corresponding with absorption lines in the infrared spectra of methane. In addition, we have produced a strain compensated MOVPE-grown quantum cascade laser operating at λ~4.5μm.

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