High-performance near-room-temperature 2-12 um photodetectors

Details High-performance near-room-temperature 2-12 um photodetectors High-performance near-room-temperature 2-12 um photodetectors

Jul 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2225..166p&link_type=abstract

Proc. SPIE Vol. 2225, p. 166-173, Infrared Detectors and Focal Plane Arrays III, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

Performance

Scientific paper

The ultimate signal-to-noise performance of the semiconductor photodetector is limited by the statistical fluctuations of the thermal generation and recombination rates in the semiconductor. Various ways to improve the performance of photodetectors operated at near room temperature including: optimized gap/doping profile, reduced volume of the device, and the use of non- equilibrium depletion of semiconductor have been proposed. Practical 2 to 12 micrometers devices with improved performance are reported.

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