High-performance long-wave infrared HgCdTe scanning focal plane arrays for surveillance applications

Computer Science

Scientific paper

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Scientific paper

This paper describes an advanced scanning long wavelength IR focal plane array fabricated in HgCdTe. Comprised of an array of front-side illuminated, planar n-on-p homojunction diodes mated to a Si CMOS readout integration circuit, the array has a measured average spectral cutoff wavelength of 10.8 micrometers at 65 K with an average quantum efficiency of 87%. The FPA's peak D(superscript *) at temperatures of 65 and 78 K, in the absence of background radiation, exceeds 9.3 X 10(superscript 11) and 2.6 X 10(superscript 11) cm(root)Hz/W, respectively. No appreciable 1/f noise is evident even for reverse bias voltages as large as 50 mV. Both the spectral and the spatial responses of the diode are well-behaved; and the measured noise contribution due to background radiation agrees with theory.

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