High-performance 480x12x4 linear CMOS IR multiplexer

Details High-performance 480x12x4 linear CMOS IR multiplexer High-performance 480x12x4 linear CMOS IR multiplexer

Oct 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3794..122w&link_type=abstract

Proc. SPIE Vol. 3794, p. 122-133, Materials and Electronics for High-Speed and Infrared Detectors, Stephen M. Goodnick; Walter F

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Scientific paper

This paper describes a linear CMOS IR multiplexer comprising four spectral bands, each with 480 channels of 12 TDI elements. The multiplexer is designed to interface with high R(subscript 0)A InSb detectors manufactured by Litton EOS, Tempe, AZ. The requirement to handle a wide range of photocurrents down to 100 fA, yet maintaining a signal bandwidth in excess of 2.5 kHz imposed significant demands on the input buffer amplifier design. In addition, each detector cell incorporates a sample/hold stage to allow snapshot operation mode. These features lead to a challenging layout for the 32 micrometers pitch to be met. To optimize dynamic range, each band may be independently operated with one of three gain settings set by switchable capacitors within the unit cell. Other architectural features of the array include bi- directional scanning, externally controllable integration time and electrical test. The array dissipates less than 50 mW of power and exhibits less than 65 noise electrons at high gain setting. A 0.7 micrometers silicon technology was used. Special design techniques were employed to allow operation at 7.5 V, thereby enhancing dynamic range. IR cameras incorporating the multiplexer are currently being delivered to the customer.

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