HgCdTe photovoltaic detectors and some related aspects

Details HgCdTe photovoltaic detectors and some related aspects HgCdTe photovoltaic detectors and some related aspects

Sep 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1685..182t&link_type=abstract

Proc. SPIE Vol. 1685, p. 182-192, Infrared Detectors and Focal Plane Arrays II, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

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Scientific paper

Recent developments in HgCdTe photovoltaic detector technology are reviewed. The status of related areas in China are introduced. Some aspects of research work on device physics and technology conducted in the authors' laboratories are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field- enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.

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