Computer Science – Performance
Scientific paper
Apr 1999
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..416r&link_type=abstract
Proc. SPIE Vol. 3629, p. 416-423, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.
Computer Science
Performance
Scientific paper
The surface passivation is essential for the fabrication of high performance HgCdTe photodiodes, especially for photodiodes with small junction area. The fabrication of the HgCdTe photodiodes passivated with a wide band gap epitaxial layer has been described. The planar double-layer heterojunction (DLHJ) structures used in fabrication Hg(subscript 1- x)Cd(subscript x)Te photodiodes were grown on CdZnTe substrates by liquid phase epitaxy (LPE). The P(superscript +)-n long wavelength infrared radiation (LWIR) photodiodes were fabricated by arsenic diffusion into n-type HgCdTe DLHJ structures. To improve the photodiode performance a thickness of n-type base layer was limited. The photodiodes performances were determined from measurements of the current-voltage and spectral response characteristics. The generation- recombination current was found to be dominant current around zero bias voltage at 77 K. The diodes without antireflection coating had a typical quantum efficiency of 60 percent. The performance of both type of p-n LWIR HgCdTe photodiodes (with and without the wide band gap epitaxial layer) have been compared.
Adamiec Krzysztof
Rogalski Antoni
Rutkowski Jaroslaw
No associations
LandOfFree
HgCdTe photodiode passivated with a wide-bandgap epitaxial layer does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with HgCdTe photodiode passivated with a wide-bandgap epitaxial layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and HgCdTe photodiode passivated with a wide-bandgap epitaxial layer will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-896396