HgCdTe avalanche photodiode development

Details HgCdTe avalanche photodiode development HgCdTe avalanche photodiode development

Sep 1979

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1979mit..reptr....h&link_type=abstract

Final Report, 1 Aug. 1978 - 30 Sep. 1979 Massachusetts Inst. of Tech., Cambridge.

Other

Avalanche Diodes, Cadmium Tellurides, Epitaxy, Mercury Compounds, Photodiodes, Electrical Resistivity, Electron Microscopy, Liquid Phases, X Ray Diffraction

Scientific paper

This report covers in detail the mercury cadmium telluride research work carried out on avalanche photodiode development at Lincoln Laboratory for the period 1 August 1978 through 30 September 1979. The topics covered are the liquid phase epitaxial growth of HgCdTe, liquidus isotherm determination by differential thermal analysis, optical and electrical characterization of various epitaxially grown layers on CdTe and CdTeSe substrates.

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