Mathematics – Logic
Scientific paper
Nov 2001
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4454...60b&link_type=abstract
Proc. SPIE Vol. 4454, p. 60-70, Materials for Infrared Detectors, Randolph E. Longshore; Ed.
Mathematics
Logic
3
Scientific paper
The epitaxial growth of Hg1-xCdxTe in the composition range 0.40 < x < 0.17 has been carried out on 3-inch CdTe/Si substrates mounted on indium-free molybdenum substrate holders. Because this mounting configuration prevents the effective use of a direct thermocouple contact to control the sample temperature, and because a dramatic change in the surface emissivity of the sample occurs during the onset of HgCdTe nucleation, an alternative method for controlling the surface temperature is developed. We utilize reflection high-energy electron diffraction (RHEED) and a thermocouple ramping sequence to maintain a constant HgCdTe surface temperature. Due to the narrowness of the HgCdTe growth window, small variations in the surface temperature produce a slight but observable change in the RHEED pattern. Through careful observation of the RHEED images, an optimized thermocouple ramping process is obtained such that the RHEED pattern remained constant from the onset of HgCdTe nucleation. Structural and electrical characterization of these samples demonstrate the usefulness of the temperature ramping methodology. For middle wavelength IR (MWIR) material, mobility measurements made on several n-type samples at 77 K range give values in the 2 X 104 - 4 X 104 cm2/Vsec range with doping levels in the low 1014 cm-3. Additionally, preliminary lifetime measurements made on one MWIR sample gives 2.8 microsecond(s) ec. For long wavelength IR material, mobility measurements made on several n-type samples at 77 K give values in the 3 X 105 to 5 X 105 cm2/Vsec range with doping levels in the mid 1015 cm-3. Electrical, structural and defect characterization along with device results are presented with a focus on the optimization of the thermocouple ramping process. In addition, the efficacy of Si-based composite substrates for the technological advancement of large format IR focal plane arrays will be discussed.
Boieriu Paul
Brill Gregory
Chen Yong P.
Dhar Nibir K.
Velicu Silviu
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